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[01.26.(수) 10:00~] [반도체혁신인재양성센터] 세미나: GaN Power HEMTs: charge trapping and reliability-limiting phenomena
작성자 배규태 작성일 2026-01-19 조회수 83
첨부파일

 

1. 제 목 : GaN Power HEMTs: charge trapping and reliability-limiting phenomena

 

2. 발 표 자 : Prof. Gaudenzio Meneghesso (Padova Univ.)

 

3. 일 시 : 2026년 1월 26일(수) 10:00 ~ 12:00

 

4. 장 소 : IT대학 1호관 318호

 

5. 초청교수 : 김대현 교수

 

6. 강사약력 :

  

Education

- PhD Electrical and Telecommunication Engineering, University of Padova (1997)

- B.S. Electronics Engineering, University of Padova (1992)

 

Work Experience

- Director of the Information Engineering Department, Università degli Studi di Padova

- Member of the “Advance Characterization and Modeling of Electronics” Group (ACME)

- Co-Director of the Summer School of Information Engineering

- Project Coordinator: H2020 InRel-NPower

- Scientific Coordinator: ECSEL GaN4AP

 

Research Interests

Power devices on wide bandgap semiconductors (GaN, SiC), Microwave and optoelectronics devices on III-V and III-N, RF-MEMS switches for reconfigurable antenna arrays, Electrostatic discharge (ESD) protection structures, organic semiconductors devices, photovoltaic solar cells based on various materials.

 

 7. 내용요약 :

 This presentation provides an in-depth overview of charge trapping phenomena and key reliability-limiting mechanisms in GaN power transistors. Particular emphasis is placed on dynamic on-resistance degradation and threshold voltage instability, with an analysis of the underlying processes. Advanced methodologies for trap characterization and physics-based modeling are discussed and validated through comparison with experimental data. The main degradation processes under off-state and on-state stress are examined using systematic constant-voltage stress experiments. The contribution of impact ionization is also addressed, and the presentation concludes with results from dynamic stress measurements, highlighting their implications for long-term device reliability.

 


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